ALTINDAL, S. On the origin of increase in the barrier height and decrease in ideality factor with increase temperature in Ag/SiO2/p-Si (MIS) Schottky Barrier Diodes (SBDs). JOURNAL OF MATERIALS AND ELECTRONIC DEVICES, [S. l.], v. 1, n. 1, p. 38–43, 2019. Disponível em: http://dergi-fytronix.com/index.php/jmed/article/view/13. Acesso em: 24 jan. 2026.