Investigation of capacitance and conductance characteristics of pyrene-based Schiff base Schottky diode prepared by spin coating method

Abstract

This study aimed to produce an Al/PyMIs/n-Si/Al Schottky diode utilizing isoniazid and pyrene-based Schiff base (PyrMIs) thin film on n-type Si. Thin film was deposited by spin coating. The Al/PyMIs/n-Si/Al diode's capacitance (C) and conductance (G) were measured at various frequencies and voltages. A voltage range of (-2V) to (+2V) and a frequency range of 1 kHz to 1 MHz were used for testing the diode. The series resistance (R_s) and interface state density (N_ss) values were determined using the conductance and Hill-Coleman methods, in that order, in accordance with the frequency. At 2V, the series resistance values decreased from 1.07 kΩ to 33.8 Ω over the 1 kHz and 1 MHz frequency ranges, respectively. The interface state density was calculated to be within the range of 10¹² eV^-1 cm^-2.