Investigation of diode parameters of Al/Al2O3/n-Si Schottky diode produced by RF sputtering method according to current-voltage and capacitance-voltage characteristics

Abstract

The primary goal of this work is to ascertain the Al/Al₂O₃/n-Si MIS type structure's current-voltage (I-V) and capacitance-conductance-voltage (C-G-V) performance when fabricated on an n-Si wafer using the sputtering method. The I-V electrical measurements of the fabricated MIS-type Schottky diode structure were taken at room temperature and in the dark. Critical electrical parameters, such as saturation current (), ideality factor (), barrier height (), series resistance (), and rectification rate (RR), are extracted using thermionic emission (TE) theory. At ± 1 V, the structure's rectifying ratio (RR) was discovered to be roughly 7965. The values ​​of ideality factor, barrier height and saturation current are found to be about 1.56, 0.816 eV and 6.37 nA, respectively. Using Norde's approach and the TE method, the series resistance values were found to be 3.32 kΩ and 1.06 kΩ, respectively. It was discovered that the interface density of states was roughly between 10¹¹ and 10¹² eV^-1 cm^-2. 4.66x10¹¹ eV^-1 cm^-2 in the energy range (-0.72 eV) and 2.17x10¹² eV^-1 cm^-2 in the energy range (-0.53 eV) were determined to be the interface density of states. Additionally, frequency dependent capacitance () and conductance () data for the Al/Al₂O₃/n-Si structure produced at room temperature were investigated in the voltage range of -4 - +4 V and the frequency range of 20 kHz - 1 MHz. The doping donor atoms (), barrier height (), and Fermi level () for each frequency were determined by computing the interception and slope of the C^-2-V plot. As the frequency increases, both the  and values increase.  Additionally, voltage dependence profiles of frequency and  were extracted from  and  data using the Nicollian-Brews method.