TASCI, E. Electrical characterization of Al/p-Si Schottky diodes with interfacial SiO2 oxide layer fabricated at 500 oC. JOURNAL OF MATERIALS AND ELECTRONIC DEVICES, [S. l.], v. 4, n. 1, p. 20–23, 2024. Disponível em: https://dergi-fytronix.com/index.php/jmed/article/view/290. Acesso em: 20 jan. 2025.