Analysis of main electrical characteristics of Al/GO-PTCDA/p-Si structure at room temperature

Abstract

We investigated the main electrical characteristics of Al/GO-PTCDA/p-Si structures at room temperature (300 K). The electrical characteristics such as the ideality factor n, the barrier height F_bo, and the series resistance R_S of the Al/GO-PTCDA/p-Si structure can be determined with one single I-V measurement. The current–voltage (I–V) characteristics of the Al/GO-PTCDA/p-Si structures were analyzed by the thermionic emission theory. Furthermore, the energy distribution of interface states density (N_SS) as a function of energy distribution (E_SS- E_V) were determined from the forward bias I–V characteristics by taking into account the bias dependence of the effective barrier height. The results show that the values of the main electrical properties are important parameters to determine the properties of Al/GO-PTCDA/p-Si structures.