Shape Memory Alloy Layered CuAlFeMn/n-Si/Al Photodiode with a High Photo-responsivity Merit and Negative Capacitance

Abstract

In this study, a new Schottky MS contact type CuAlFeMn/n-Si/Al photodiode was fabricated via coating thin film CuAlFeMn shape memory alloy with a different composition on n-type silicon substrate by using thermal evaporation method. The photoelectrical diode/photodiode characterization of the produced photodevice was conducted by taking photo-electrical current-voltage (I-V), dynamic current-time (TPC, I-t) and capacitance-voltage (C-V) measurements in dark condition and under different artificial day light conditions. The obtained characteristic forward bias I-V plots revealed the photovoltaic and photoconductive properties. Excellent responsivity and good detectivity maxima values were achieved. The photovoltaic behavior of the produced photodiode was apparently observed on the TPC light-on/light-off patterns. Negative capacitance occurrence was observed by taking the capacitance-voltage measurements.