Investigation of the use of Al/ZnO-NiO/p-Si/Al device produced by dynamic sol-gel spin coating technique in the detection of infrared light

Abstract

In this study, it was investigated whether Al/ZnO-NiO/p-Si/Al photodiode devices, which we produced in our previous study and whose electrical and photoresponse properties were investigated, can be used as photodetectors in the detection of infrared light. Photoresponse properties were determined by current-voltage (I-V) and current-time (I-t) characterizations in dark and 100 mW/cm² infrared light. All devices are sensitive to infrared light. The photodetector, which is most sensitive to infrared light, is the device with a 1:1 ratio of ZnO-NiO, and the highest photosensitivity is 12979.57 in this device. The highest photosensitivity to infrared light is 8.89 x 10^-4 A/W in the ZnO device. The results show that the photoresponse of photodetectors to infrared light can be controlled by changing the ZnO-NiO ratio, and Al/ZnO-NiO/p-Si/Al devices can be used as infrared light detectors.