Electrical Properties of InSe/PMItz Nanocomposite Thin Films
An outperforming inorganic semiconductor InSe thin films were growth on glass/ITO substrate by electrochemical deposition method and one group annealed. Organic semiconductor PMItz was successfully growth on two separate films by physical vapor deposition (PVD) method. For electrical analyses, heterojunctions were contacted with indium and their I-V characteristics were investigated under varying light intensities. From I-V measurements, it is calculated that ideality factors n were between 7.53-3.94 and 1.45-1.42, fill factors were between 0.25 and 0.26 and serial resistance Rs values were ≈108Ω. It is observed from overall data that first time growth inorganic-organic heterojunctions herein exhibited photodiode and photovoltaic behaviours.