Investigation of interface state density, series resistance, and diode parameters of Ag/n-InP/In Schottky barrier diodes

Abstract

We reported the ideality factor, barrier height, series resistance, and interface state density parameters  of the Ag/n-InP/In Schottky diode from current–voltage (I–V) characteristics. We have presented three of many I-V measurements. The conventional thermionic emission (TE) theory is used to study the I-V characteristics. Every produced diode exhibited rectifying characteristics. As an illustration of the computed parameters, the values for ideality factor, barrier height, saturation current, and series resistance  are found to be 2.375, 0.486 eV, 1.95x10^-4 A, and 3.06 , respectively. The values of interfacial state density were found to be approximately 10¹⁴ eV^-1 cm^-2. As an illustration, consider the energy range where the interfacial state density was 9.50x10¹⁴ eV^-1 cm^-2 in the 0.307-  energy range and 3.77x10¹⁴ eV^-1 cm^-2 in the 0.458-  energy range.