Solar light sensitive molybdenum disulfide photodiode for thin electronic devices

Abstract

The p-Si/MoS2 diode was prepared using molybdenum disulfide and p-type silicon wafer. The rectifying properties of the diode were analyzed using current-voltage (I-V) and capacitance-voltage (C-V) characteristics. The photoresponse properties of the diode were prepared with solar irradiation from 20 mW/cm2 to 100 mW/cm2. The increase in current of the diode with light illumination suggests that the diode exhibited a photoconducting behavior. The prepared photodiode having photoconducting behavior can be used in optoelectronic applications.