Investigation of electrical parameters of Al/GO-PTCDA/p-Si semiconductor structures under different light intensities

Abstract

The current-voltage (I-V) characteristics of the Al/GO-PTCDA/p-Si metal-oxide-semiconductor (MOS) structure were investigated in dark and under 40 mW/cm2 light illumination. The electrical parameters such as ideality factor (n), zero-bias barrier height (bo) and series resistance (RS) of Al/GO-PTCDA/p-Si metal-oxide-semiconductor (MOS) structure obtained from different methods in under dark and illumination conditions at room temperature using forward bias current-voltage (I−V) measurements. Experimental results shows that the photocurrent under illumination intensities is higher than the dark current. The values of RS obtained from Cheung and Norde functions are also decreased with increasing illumination intensity. The illumination dependent power-voltage curve of the Al/PCDA-GO/p-Si photodiode at 40 mW/cm2 of Al/PTCDA-GO/p-type Si structure were investigated using current–voltage (I–V) characteristics.