Voltage dependent photocurrent characteristics of Al/PTCDA/p-type Si structures in the light intensity range of 20-100 mW/cm2
Abstract
In this study, The PTCDA solution was coated on the p-Si semiconductor by Spin Coating method to form a very thin film layer. The photoelectric/photovoltaic values of Al/PTCDA/p-type Si structures were investigated in the light intensity range of 20 mW/cm2 and 100 mW/cm2 using current-voltage measurements. Thus, the fundamental photovoltaic values such as open circuit voltage (Voc), short circuit current density (Jsc), maximum current density (Jmax), maximum voltage (Vmax) and maximum power (Pmax) were acquired as 0.176 V, 1.057×10−3 A/cm2, 7.580×10−4 A/cm2, 0.112 V, 8.484x10-5 W; 0.159 V, 4.586×10−3 A/cm2, 2.700×10−3 A/cm2, 0.079 V, 2.1584x10-4 W under 20 mW/cm2 and 100 mW/cm2 light intensity, respectively. According to the obtained results, the experimental results showed that the electrical properties of Al/PTCDA/p-Si structures will improve depending on the light intensity and thus this structure can be developed for photovoltaic applications.
