Phosporous doped graphene oxide thin film battery

Abstract

Phosporous doped graphene oxide (p-GO) was synthesized using modified Hummer’s method to fabricate a battery. The chemical structure of phosporous doped graphene oxide was analyzed by X-ray diffraction and FT-IR techniques. The photoelectrical characteristics of the battery indicate that phosporous doped graphene oxide (p-GO) ,gives an open circuit voltage (1.0 V) and short circuit current (0.51 mA). These results that suggests that phosporous doped graphene oxide (p-GO) based battery can be used in energy applications.