Photoelectric and Diode Characteristics of Al(CdO:ZnO:NiO:Ti)p-Si/Al Schottky Diodes

Abstract

Solutions containing CdO:ZnO:NiO:Ti composite compounds  were produced using sol gel method. CdO:ZnO:NiO:Ti composite solutions were drop cast and spin coated on p-type Si wafer and Al(CdO:ZnO:NiO:Ti)p-SiAl thin films were obtained. Certain photovoltaic characteristics such as photodiode's sensitivity (S:photosensitivity), responsivity (R: photoresponsivity), and specific detectivity (D*: photodetectivity) were derived using various methods. Values for S, R, and D* at an illumination intensity of 100 mW/cm² were found to be 140, 0.024 mW/cm², and 7.2 × 10⁹ Jones, respectively. Fundamental electrical parameters of the Al/(CdO:ZnO:NiO:Ti)/p-Si/Al diode, such as: donor atom concentration (N_A), Fermi energy (E_F), diffusion potential (V_D = Vo + kT/q), depletion region width (W_D), maximum electric field at the junction (E_m), barrier height (Φ_B(C-V)) were assessed.  The values of N_A, E_F, V_D = V₀ + kT/q, W_D, and Φ_B(C-V) for the fabricated Al/(CdO:ZnO:NiO:Ti)/p-Si/Al diode were obtained from the 1/C² - V graph at 500 kHz as 6.94 × 10¹⁵ cm⁻³, 0.231 eV, 0.79 eV, 3.62 × 10⁻⁵ cm, and 1.16 eV, respectively.