CdO:NiO Nanocomposite Photodiodes
Abstract
CdO:NiO solution was used to produce nanocomposite thin films which were produced in 1:1 molar rate using sol gel method. The drop casting technique was used to apply nanoparticles on p-type Si wafers and spin coating method was used after the drop cast. Optical absorption and transmission plots of the composite thin film were obtained using visible UV spectra. The energy bandgap of photodiode was calculated using UV data where bandgap energy was calculated as CdO:NiO composites. I-V data was obtained in different light intensities. Using I-V characteristics different photodiode parameters were calculated using different techniques. I-V characteristics were used to assess photovoltaic different photovoltaic characteristics such as ideality factor, barrier height, series resistance, Shunt resistance, etc. Thermionic emission theory and Cheung & Cheung function were used to assess such properties. Iph and photoresponsivity characteristics were also addressed in the work. Photodiode exhibits illumination dependent characteristics where an alteration in illumination intensity alters photoresponsive characteristics.