Current–Voltage Characteristics of Al/(CdO:ZnO:NiO:Ti)/p-Si/Al Quaternary Functional Schottky Diodes

Abstract

Solutions containing CdO:ZnO:NiO:Ti nanoparticle complex were produced in using sol gel method. CdO:ZnO:NiO:Ti solutions were drop cast p type Si wafer and thin films were obtained. I-V characteristics of Al/(CdO:ZnO:NiO:Ti)/p-Si/Al photodiodes were obtained using Fytronix solar simulator. Using the I-V data various diode characteristics pertaining to Al/(CdO:ZnO:NiO:Ti)/p-Si/Al photodiodes were calculated such as barrier height, ideality factor, saturation constants. In investigations, various methods were used such as thermionic emission theory, Cheung & Cheung method and Norde method. Photo responsive characteristics of the diodes revealed that thin films show photo responsive. Barrier height of the Al/(CdO:ZnO:NiO:Ti)/p-Si/Al Quaternary Functional Schottky Diodes were found to be 0.73 eV and 0.69 eV for the measurements conducted in dark and under illumination, respectively.  Ideality factors of the diodes were found to be 9.61 and 8.78 for the measurements in dark and under illumination. Series resistance and Shunt resistance values were also evaluated using alternative methods.