Photodiode Characteristics of TiO:NiO Composite Thin Structures

Abstract

TiO:NiO suspension was prepared prior to thin film production. The suspension was prepared 1:1 molar rate which was produced using sol-gel method. The suspension was then spin-coated on p-type Si wafers. I-V (current - voltage) characteristics of the composite thin films were investigated in the dark and under different illumination intensities. Current - voltage graphs of the TiO:NiO composite thin films were used to determine the photovoltaic characteristics. Three different methods (Ohms Law, Thermionic Emission Theory, and Cheung& Cheung Theory) were used to assess the photodiode characteristics of the composite thin films. In the photodiode characterization, different parameters like series resistance, barrier height, Shunt resistance, ideality factor, etc. were determined. İllumination related characteristics like Iph and photoresponsivity characteristics were also investigated in this work. It was seen that TiO:NiO composite thin films were affected by illumination intensities where illumination-dependent diode characteristics were evidenced in the work.